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| e PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a final stage in Wide CDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 70 Watts, 2.1-2.2 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 120 Output Power (Watts) 100 80 60 40 20 0 0 4 8 12 16 20 202 LOT COD 35 E VCC = 26 V ICQ = 150 mA Total f = 2.2 GHz Input Power (Watts) Package 20225 * Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 55 55 3.5 12 320 1.83 -40 to +150 0.547 Unit Vdc Vdc Vdc Adc Watts W/C C C/W * This package not recommended for class A or CW operation. Two PTB 20245s recommended for CW operation. 1 9/28/98 PTB 20235 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 20 mA IC = 0 A, IE = 20 mA VCE = 10 V, IC = 1.5 A Symbol V(BR)CES V(BR)EBO hFE Min 55 3.5 30 Typ -- 4.0 50 Max -- -- 120 Units Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, POUT = 15 W, ICQ = 150 mA, f = 2.2 GHz) Gain Compression (VCC = 26 Vdc, ICQ = 150 mA, f = 2.2 GHz) Collector Efficiency (VCC = 26 Vdc, POUT = 70 W, ICQ = 150 mA, f = 2.2 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 70 W(PEP), ICQ = 150 mA, f = 2.2 GHz --at all phase angles) Symbol Gpe P-1dB C Min 7.5 70 -- -- Typ 8.0 -- 40 -- Max -- -- -- 5:1 Units dB Watts % -- Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) Broadband Test Fixture Performance 10 Gain (dB) 8 Efficiency (%) 40 6 50 60 Output Power & Efficiency 10 9 8 Gain (dB) 7 6 120 100 80 Gain Gain VCC = 26 V ICQ = 150 mA Total VCC = 26 V 4 2 0 2100 Return Loss (dB) 2120 2140 2160 2180 30 -5 20 -15 10 -25 0 2200 60 40 POUT = 70 W Efficiency (%) 5 2050 2100 2150 2200 20 2250 Frequency (MHz) Frequency (MHz) 2 9/10/97 Return Loss ICQ = 150 mA Total Efficiency e Output Power vs. Supply Voltage 110 10 PTB 20235 Power Gain vs. Output Power ICQ = 150 mA Total Power Gain (dB) 9 Output Power (Watts) 100 90 80 70 60 22 23 24 25 26 27 ICQ = 75 mA Total 8 ICQ = 150 mA Total f = 2.2 GHz 7 ICQ = 38 mA Total VCC = 26 V f = 2.2 GHz 10 100 6 1 Supply Voltage (Volts) Output Power (Watts) Intermodulation Distortion vs. Output Power -20 VCC = 26 V -25 ICQ = 150 mA f1 = 2.200 GHz f2 = 2.199 GHz IMD (dBc) -30 -35 -40 -45 -50 10 20 30 40 50 60 70 80 Output Power (Watts-PEP) Impedance Data VCC = 26 Vdc, POUT = 70 W, ICQ = 150 mA Z Source Z Load Frequency GHz 2.05 2.10 2.15 2.20 2.25 R 6.18 7.58 8.76 9.16 7.96 Z Source jX -6.7 -6.9 -6.2 -4.8 -3.6 3 R 6.4 5.9 5.5 5.0 4.8 Z Load jX -5.8 -5.0 -4.1 -3.0 -2.6 8/19/97 PTB 20235 Test Circuit e Q1 Block Diagram for f = 2 GHz l1, l2, l21, l22 l3, l4 l5, l6 l7, l8, l11, l12 l9, l10 l13, l14 l15, l16 l17, l18 l19, l20 Q1 PTB 20235 NPN RF Transistor 0.25 2GHz Microstrip 50 0.085 2GHz Microstrip 80 0.067 2GHz Microstrip 20 0.0217 2GHz Microstrip 11.7 0.053 2GHz Microstrip 8.15 0.055 2GHz Microstrip 6.7 0.052 2GHz Microstrip 11.45 0.060 2GHz Microstrip 16.9 0.160 2GHz Microstrip 75 L1, L2 L3, L4 L5, L6 C1, C2 C3-8, C17, C18 C9, C11, C13, C15 C10, C12, C14, C16 R1, R2 T1, T2 Board 6.8 nh SMT Inductor 56 nh SMT Inductor 4 mm. SMT Ferrite 0-4 pF Johanson Piston Trimmer 20 pF (B ATC 100) 0.1 F 1206 10 F SMT Tantalum 10 SMT UT 70-50 0.031" G200, Solid Copper Bottom, AlliedSignal Placement Diagram (not to scale) 4 9/10/97 e PTB 20235 Artwork (1 inch ) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1997 Ericsson Inc. EUS/KR 1301-PTB 20235 Uen Rev. B 09-28-98 5 9/28/98 |
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